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The BC859BW,135 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package with three leads. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter voltage rating of 45 V. Key electrical characteristics include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 200 mW. The component features a transition frequency of 100 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix 'BW' against official Nexperia documentation to confirm the exact DC current gain binning, as this parameter distinguishes it from other variants like 'CW'. Ensure the ordering part number matches the required gain specification for your circuit design before procurement.
Select this component when a PNP transistor with a 45 V collector-emitter voltage rating and 100 mA current capability is required in a compact SOT-323 footprint. Consider the specific hFE bin associated with the 'BW' suffix to ensure compatibility with high-gain requirements in low-noise analog stages.
This component belongs to the Nexperia BC859 series of general-purpose PNP transistors. It serves as the PNP complement to the BC849 NPN transistor family. The series is designed for low-current, low-voltage applications requiring small form factors and reliable performance in consumer electronics and audio equipment.
BC859CW,135
The maximum collector-emitter voltage (VCEO) is 45 V.
It uses the SOT-323 (also known as SC-70) surface-mount plastic package.
Yes, it is documented for use in low noise stages in tape recorders, hi-fi amplifiers, and other audio-frequency equipment.