SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC859C is a general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It operates with a maximum collector current of 100 mA and features three distinct DC current gain groups (A, B, and C). The device is housed in an SOT-23 surface-mount package and supports a maximum power dissipation of 250 mW. Electrical characteristics include a collector-emitter breakdown voltage of 30 V, a transition frequency of 100 MHz, and a junction temperature range from -55°C to +150°C.
Verify the specific suffix against official Diotec documentation to confirm the intended grade. The '-C' designation indicates commercial grade availability. Ensure that the selected component meets the required reliability standards for the target application environment before finalizing procurement decisions.
Select this component based on the required current gain group (A, B, or C) to match circuit sensitivity. Confirm that the 30 V collector-emitter voltage rating aligns with the system's operational limits. Verify that the SOT-23 package dimensions fit the available board space constraints.
This part belongs to the BC856...BC860 series of SMD universal PNP transistors. It serves as a complementary counterpart to NPN devices within the same family. The series provides standardized performance metrics for common electronic design requirements across various consumer and industrial electronics platforms.
Compatible complementary NPN transistors include the BC846 through BC850 series. Direct replacements must match the SOT-23 package and verify equivalent electrical ratings for voltage and current handling capabilities.