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The BC859C,215 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23-3 (TO-236AB) surface-mount package. Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter voltage rating of 30 V. The device features a power dissipation capacity of 250 mW and a transition frequency of 100 MHz. DC current gain ranges from 420 to 800 at a collector current of 2 mA. Operating temperatures span from -65 °C to +150 °C.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging format and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and lead time requirements with the supplier prior to finalizing procurement orders for production schedules.
Select this component for designs requiring a PNP transistor with moderate current handling capabilities in a small footprint. Consider the 30 V voltage rating and 100 mA current limit when determining suitability for load driving tasks. Evaluate thermal management needs based on the 250 mW power dissipation rating within the SOT-23 enclosure constraints.
This part belongs to the BC859 series of PNP transistors offered by Nexperia. It serves as the complementary counterpart to the BC849C NPN transistor. The series is designed for low-voltage, low-current applications requiring reliable performance in consumer electronics and industrial control systems utilizing standard surface-mount assembly processes.
Direct functional substitutes may include other PNP transistors with identical pinouts and similar electrical ratings, such as the BC859B or BC859A variants, provided their gain bands align with circuit requirements. Verify package compatibility and voltage/current limits before substitution.