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The BC859C,235 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 30 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 250 mW. The component offers a gain-bandwidth product of 100 MHz and a DC current gain (hFE) ranging from 420 to 640 at 2 mA and 5 V. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and electrical tolerances. Ensure the ordering part number matches the required hFE binning and packaging format. Cross-reference datasheet revisions to confirm RoHS compliance status and lead-free manufacturing processes before finalizing procurement specifications.
Select this component for designs requiring a compact PNP transistor with moderate voltage ratings. The SOT-23 package facilitates automated surface-mount assembly. Consider the thermal resistance and power dissipation limits when designing heat management strategies. Verify that the required current gain meets the specific circuit biasing requirements.
This component belongs to the Nexperia BC859 series of PNP transistors. It serves as the complementary counterpart to the BC849C NPN transistor. The series is designed for low-voltage, low-current applications in consumer electronics and industrial equipment. The standard SOT-23 package provides a balance between performance and board space efficiency.
BC859C,215
The maximum collector-emitter voltage (VCEO) is 30 V.
Yes, it has a gain-bandwidth product (fT) of 100 MHz.
The device operates between -65 °C and +150 °C.