BC859C,235

BC859C,235

$0.16
  • Description:TRANS PNP 30V 0.1A TO-236AB
  • Series:-

SKU:988443cbe1ec Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PNP 30V 0.1A TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BC859C,235

Overview

The BC859C,235 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 30 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 250 mW. The component offers a gain-bandwidth product of 100 MHz and a DC current gain (hFE) ranging from 420 to 640 at 2 mA and 5 V. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

  • PNP polarity configuration for general-purpose switching and amplification applications
  • Low saturation voltage characteristics for efficient signal handling
  • High DC current gain ensuring effective control with minimal base drive

Applications

  • General purpose switching circuits
  • Amplifier stages
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm pinout compatibility and electrical tolerances. Ensure the ordering part number matches the required hFE binning and packaging format. Cross-reference datasheet revisions to confirm RoHS compliance status and lead-free manufacturing processes before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a compact PNP transistor with moderate voltage ratings. The SOT-23 package facilitates automated surface-mount assembly. Consider the thermal resistance and power dissipation limits when designing heat management strategies. Verify that the required current gain meets the specific circuit biasing requirements.

Part Context

This component belongs to the Nexperia BC859 series of PNP transistors. It serves as the complementary counterpart to the BC849C NPN transistor. The series is designed for low-voltage, low-current applications in consumer electronics and industrial equipment. The standard SOT-23 package provides a balance between performance and board space efficiency.

Replacement Considerations

BC859C,215

FAQ

What is the maximum collector-emitter voltage for the BC859C,235?

The maximum collector-emitter voltage (VCEO) is 30 V.

Does the BC859C,235 support high-frequency operation?

Yes, it has a gain-bandwidth product (fT) of 100 MHz.

What is the operating temperature range?

The device operates between -65 °C and +150 °C.

BC859C,235BC859C,235
$0.16
Buy Now