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The BC859CE6327HTSA1 is a single PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and designed for general-purpose amplification and switching applications. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA, with a peak pulsed current rating of 200 mA. It features a DC current gain ranging from 420 to 800 at specified test conditions and operates within a temperature range of -65°C to +150°C.
Verify the complete part number including the E6327HTSA1 suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and check for any end-of-life notices or obsolescence warnings prior to finalizing procurement orders.
Select this component when a single PNP transistor with moderate voltage ratings and high gain is required in a small footprint. Ensure the application current does not exceed the 100 mA continuous limit and verify that the 30 V breakdown voltage aligns with the circuit supply rails.
This component belongs to the BC859 series of PNP transistors, which are widely used in standard discrete semiconductor applications. The specific suffix indicates the manufacturer's internal coding for the SOT-23-3 package and reel configuration, distinguishing it from other variants in the broader BC8xx family.
Consult official Infineon cross-reference guides for verified substitutes. Generic replacements may differ in gain bands or saturation voltages; validate electrical compatibility before implementation.