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Product Detailed Parameters
- Description：TRANS PNP 30V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC859CMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-base voltage of -30 V and a collector-emitter voltage of -30 V. The device supports a maximum DC collector current of -100 mA with a power dissipation rating of 310 mW. Its current gain bandwidth product is 150 MHz, and it offers a low noise figure of 1.2 dB at -200 µA collector current. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Designed for switching and amplifier applications
- Optimized for low noise performance
- Compatible with automatic insertion in thick and thin-film circuits
Applications
- Switching circuits
- Amplifier stages
- Thick and thin-film circuit integration
Procurement Notes
Verify the specific hFE classification suffix (A, B, or C) required for your design, as the base part number BC859 encompasses multiple gain ranges. Confirm that the 'M' suffix indicates the matte finish package type and the 'TF' suffix denotes tape and reel packaging. Ensure compatibility with existing supply chains following the Fairchild Semiconductor integration into ON Semiconductor.
Selection Notes
Select this component when low noise characteristics are critical for signal integrity in small-signal applications. The SOT-23 package provides a compact footprint suitable for space-constrained designs. Verify that the -30 V voltage ratings align with the circuit's maximum operating conditions. Consider the hFE binning options if strict DC current gain tolerances are necessary for the application.
Part Context
This device belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor. Following corporate integration, these parts are now distributed under the ON Semiconductor brand. The series includes complementary NPN counterparts such as the BC846 through BC850, allowing for matched pair configurations in differential amplifier designs.
Replacement Considerations
Direct substitutes include other BC859 variants from different manufacturers offering identical pinouts and electrical specifications. Ensure any replacement maintains the same SOT-23 package dimensions and thermal characteristics. Verify that alternative sources provide equivalent noise figures and current gain classifications.
