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The BC859CW,135 is a PNP bipolar junction transistor manufactured by Nexperia in the SOT-323 surface-mount package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 30 V. The device operates within a temperature range of -65 °C to +150 °C with a power dissipation of 200 mW. Key electrical characteristics include a gain-bandwidth product of 100 MHz and a collector-emitter saturation voltage of 300 mV. The component utilizes silicon technology and offers a minimum DC current gain of 420 at specified test conditions.
Verify the specific ordering code BC859CW,135 against official Nexperia documentation to ensure correct suffix alignment. Confirm that the SOT-323 package variant matches your PCB footprint requirements. Check RoHS compliance status through the manufacturer's official channels prior to finalizing procurement specifications.
Select this component when a PNP transistor with low voltage ratings and compact packaging is required. Ensure the circuit design accommodates the 100 mA current limit and 30 V voltage constraints. Consider the thermal management needs relative to the 200 mW power dissipation capability in the SOT-323 enclosure for reliable operation.
This part belongs to the BC859 series of small-signal PNP transistors from Nexperia. It serves as the complement to NPN devices like the BC849C. The series is designed for low-current applications requiring high gain and small form factors. The CW suffix indicates specific binning or manufacturing lot details defined by the manufacturer.
Direct substitutes may include other PNP transistors in the SOT-323 package with similar voltage and current ratings. Verify pinout compatibility and electrical parameters such as hFE and VCEO before substitution. Consult official Nexperia cross-reference guides for validated alternatives.