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The BC860AMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -45 V and a collector-base voltage of -50 V. The device supports a maximum DC collector current of -100 mA with a power dissipation rating of 310 mW. Key electrical characteristics include a DC current gain (hFE) range of 110 to 220 for the 'A' classification, a transition frequency of 150 MHz, and a low noise figure of 1.2 dB.
Verify the specific hFE binning requirements against the datasheet's A, B, or C classifications before procurement. Confirm that the tape and reel packaging format aligns with automated assembly equipment specifications. Ensure compliance with RoHS directives and material composition standards required for the target manufacturing environment.
Select this component when a low-noise PNP transistor is required for general-purpose analog or digital switching tasks. The BC860 series serves as the complementary counterpart to the BC846 through BC850 NPN transistors. Consider the specific hFE gain band necessary for the circuit design, as the 'A' suffix denotes a lower gain range compared to other variants.
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate integration. The series provides standardized small-signal solutions for consumer electronics and industrial control systems requiring reliable low-power switching and amplification capabilities.
Direct substitutes within the same family include BC860BMTF and BC860CMTF, which offer different DC current gain ranges while maintaining identical pinouts and absolute maximum ratings.