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The BC860B,215 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a SOT-23 (SC-59) surface-mount package with three leads. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of -45 V. Key electrical parameters include a collector-base voltage (VCBO) of -50 V, an emitter-base voltage (VEBO) of -5 V, and a total power dissipation of 250 mW at 25 °C. The transition frequency (fT) is rated at 100 MHz, and the DC current gain (hFE) ranges from 220 to 475 at IC = -2 mA and VCE = -5 V.
Verify the ordering suffix matches the required tape-and-reel quantity, as the '215' designation indicates specific packaging. Confirm RoHS compliance status through official Nexperia documentation prior to integration. Ensure the component source is an authorized distributor to guarantee authenticity and traceability. Check for any recent product change notices that may affect pinout or thermal characteristics.
Select this component when a PNP transistor with a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V is required. The BC860B offers a high DC current gain range of 220 to 475, making it suitable for amplification tasks. Consider the NPN complement BC849B for complementary circuit designs. Evaluate the SOT-23 package constraints against available PCB space and thermal management requirements.
The BC860B belongs to the BC859/BC860 series of PNP general-purpose transistors produced by Nexperia. This series is designed for low-current, low-voltage applications in consumer and industrial electronics. The BC860B specifically provides higher current gain compared to some legacy equivalents, facilitating efficient signal processing in compact electronic devices utilizing surface-mount technology.
The BC860C serves as a higher gain variant within the same series. For NPN functionality, the BC849B is the direct complement. Verify pin compatibility and electrical limits before substituting with other SOT-23 PNP transistors.
The maximum collector-emitter voltage (VCEO) is -45 V.
The DC current gain (hFE) ranges from 220 to 475 at IC = -2 mA and VCE = -5 V.
It uses a SOT-23 plastic surface-mounted package with 3 leads.