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The BC860B,235 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a SOT-23 (SC-70) surface-mount package with three leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of -45 V. Key electrical parameters include a DC current gain (hFE) ranging from 220 to 475 at an IC of -2 mA and VCE of -5 V. The transition frequency (fT) is specified at 100 MHz, while the total power dissipation reaches 250 mW at 25 °C ambient temperature.
Verify the specific ordering suffix matches the required tape-and-reel quantity and manufacturing origin code. Confirm that the component status aligns with production availability rather than obsolescence or qualification phases. Ensure the datasheet version corresponds to the most recent revision to validate thermal resistance and absolute maximum ratings against current design requirements.
Select this component when a PNP transistor with moderate current handling and high current gain is required for small-signal applications. The SOT-23 package offers space efficiency for compact designs. Consider the BC849B as the NPN complement for complementary circuit topologies. Evaluate the thermal resistance characteristics if operating near the maximum power dissipation limits in confined PCB layouts.
This part belongs to the BC859/BC860 series of PNP general-purpose transistors originally developed by NXP Semiconductors. Following the corporate restructuring in February 2017, the standard product business was transferred to Nexperia. The BC860B variant specifically denotes a minimum DC current gain range of 220 to 475, distinguishing it from the higher-gain BC860C option within the same family.
The BC849B serves as the direct NPN complement within the same series. Other general-purpose PNP transistors in the SOT-23 package may be considered if electrical parameters such as hFE and voltage ratings are compatible.