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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：150MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC860BMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current rating of -100 mA. The device exhibits a maximum power dissipation of 310 mW and operates within a junction temperature range of -65°C to +150°C. Electrical characteristics include a DC current gain (hFE) classification B (200 to 450), a transition frequency of 150 MHz, and a low noise figure of 1.2 dB.
Feature Summary
- Designed for switching and amplifier applications with low noise performance
- Suitable for automatic insertion in thick and thin-film circuits
- Functions as a complement to the BC846 through BC850 series
Applications
- Switching circuits
- Amplifier stages
- Thick and thin-film circuit integration
Procurement Notes
Verify component authenticity against official datasheets due to historical Fairchild Semiconductor integration into onsemi. Confirm that ordering suffixes such as 'M' indicate matte finish packaging and 'TF' denotes tape and reel packing methods. Ensure compliance with RoHS standards and check for any system nomenclature updates where underscores were replaced by dashes during the merger process.
Selection Notes
Select this component when a PNP transistor with low noise characteristics is required for signal amplification or switching tasks. The hFE classification B provides a specific gain range suitable for precise circuit designs. Consider the SOT-23 package constraints for thermal management and board space limitations compared to larger through-hole alternatives.
Part Context
This part belongs to the BC856-BC860 family of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor. Following the acquisition, these parts are managed under the onsemi portfolio. The BC860 variant specifically offers higher voltage ratings than lower-numbered siblings like the BC856, making it appropriate for slightly more demanding voltage environments within the same package footprint.
Replacement Considerations
- BC860AMTF
- BC860CMTF
FAQ
What does the 'B' suffix signify in the BC860BMTF designation?
The 'B' suffix indicates the DC current gain (hFE) classification, which ranges from 200 to 450 at a collector current of -2mA and Vce of -5V.
Is the BC860BMTF suitable for high-frequency applications?
Yes, the device has a current gain bandwidth product (fT) of 150 MHz, making it suitable for certain high-frequency switching and amplification tasks.
How does the BC860BMTF relate to the BC848 series?
The BC860 series serves as the PNP complement to the NPN BC848 series, allowing for matched pairs in differential amplifier configurations.
