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The BC860BW,115 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package with three terminals. The device supports a maximum continuous collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 45 V. Additional voltage ratings include a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 5 V. The component has a power dissipation capability of 200 mW and a transition frequency (fT) of 100 MHz. It operates within a temperature range of -65°C to +150°C.
Verify the specific ordering suffix
Select this component when a PNP transistor with 45 V collector-emitter voltage and 100 mA current handling is required in a compact SOT-323 package. Ensure the application demands AEC-Q101 qualification if used in automotive contexts. Compare against complementary NPN types like the BC849 series for push-pull configurations. Confirm that the 200 mW power dissipation limit aligns with the thermal design of the target circuit.
This part belongs to the BC860 family of PNP general-purpose transistors from Nexperia. It serves as the PNP counterpart to NPN devices such as the BC849. The family is designed for low-voltage, low-current applications requiring small form factors. The BC860BW variant specifically denotes the tape-and-reel packaging format within the standard BC860 product line.
Public confirmed substitutes include BC860CW,115 and BC860B,115. Verify pinout compatibility and exact electrical tolerances before substitution.