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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC860BWE6327 is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and supports a maximum continuous collector current of 100 mA. The device features a collector-emitter breakdown voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical parameters include a power dissipation rating of 330 mW, a transition frequency (fT) of 250 MHz, and a DC current gain (hFE) range from 200 to 450. It operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- PNP polarity configuration for signal amplification and switching applications
- High DC current gain ranging from 200 to 450 for efficient control
- Robust thermal performance with a maximum junction temperature of 150 °C
- Automotive-grade qualification compliant with AEC-Q100 standards
Applications
- General-purpose signal amplification circuits
- Switching applications in automotive electronics
- Low-power analog signal processing
- Driver stages for low-current loads
Procurement Notes
Verify the specific suffix 'BW' against official Infineon documentation to confirm the SOT-23-3 package variant and binning specifications. Confirm the component status as active or obsolete prior to procurement, as availability may vary. Ensure that the ordering part number matches the exact datasheet revision required for your design implementation.
Selection Notes
Select this component when a PNP transistor with high current gain and automotive reliability is required in a compact SOT-23-3 footprint. Consider the 45 V collector-emitter voltage limit and 100 mA current capacity for circuit design constraints. Verify compatibility with the target application's operating temperature range and power dissipation requirements.
Part Context
This component belongs to the BC860 series of PNP transistors from Infineon Technologies. The series is designed for general-purpose use in consumer and automotive electronics. The BC860BWE6327 specifically denotes the B-bin gain classification within the SOT-23-3 package format, ensuring consistent performance characteristics for mass production environments.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Potential alternatives may include other PNP transistors in SOT-23 packages with similar voltage and current ratings, provided they meet the same AEC-Q100 automotive qualification standards.
