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The BC860C is a general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It operates with a maximum collector current of 100 mA and a collector-emitter voltage rating of -45 V. The device features three distinct DC current gain groups, with the 'C' suffix indicating Group C characteristics (minimum hFE of 420 at 2 mA). It dissipates up to 250 mW of power in a SOT-23 surface-mount package. Key electrical parameters include a transition frequency of 100 MHz, a collector-base cutoff current of 15 nA, and a saturation voltage of 650 mV at 100 mA.
Verify that the specific part number includes the '-C' suffix to confirm the commercial grade designation and corresponding high-gain specifications. Ensure the procurement documentation references the correct datasheet version to validate the electrical characteristics against the manufacturer's latest updates. Confirm compliance requirements such as RoHS and REACH status match project specifications before finalizing orders.
Select this component when a PNP transistor with high DC current gain is required for standard commercial applications. The BC860C is appropriate for designs needing a 45 V collector-emitter breakdown voltage and 100 mA continuous current capability. Consider the thermal resistance and power dissipation limits relative to the PCB copper pad layout to ensure stable operation within the specified temperature range.
This component belongs to the BC856 through BC860 series of SMD universal PNP transistors produced by Diotec Semiconductor. The series offers complementary NPN options and various gain groupings to support diverse circuit requirements. The BC860C specifically provides the highest gain tier among the standard commercial variants, making it suitable for low-current amplification needs.
BC856B RFG