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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC860CB5003XT is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It features a dual configuration within an SMD/SMT SOT-23-3 package. Key electrical parameters include a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device supports a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 330 mW, with a gain-bandwidth product (fT) of 250 MHz. Operating temperatures range from -65 °C to +150 °C. The component is qualified under AEC-Q100 standards for automotive applications.
Feature Summary
- Dual PNP transistor configuration in a compact surface-mount package
- Automotive-grade qualification compliant with AEC-Q100 standards
- High thermal stability supporting extended operating temperature ranges
Applications
- Automotive electronic circuits requiring robust switching performance
- General-purpose amplification and switching tasks in consumer electronics
- Signal processing stages in industrial control systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact binning and packaging specifications. Confirm current production status as variations exist within the BC860 series. Ensure compatibility with required automotive quality standards if used in regulated environments. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement decisions.
Selection Notes
Select this component when a dual PNP BJT is required in an SOT-23-3 footprint. Consider its 45 V collector-emitter rating and 100 mA continuous current capability for low-power switching applications. Verify that the 250 MHz transition frequency meets signal bandwidth requirements. Ensure the 330 mW power dissipation limit aligns with the thermal design of the target circuit board.
Part Context
This part belongs to the BC860 series of small-signal transistors designed for general-purpose use. The series offers various configurations and binning options to suit different gain and voltage requirements. Infineon provides these components to support high-volume manufacturing needs across automotive, industrial, and consumer sectors with consistent quality and reliability.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements may not match the specific AEC-Q100 qualification or precise hFE binning of the original component.
