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The BC860CWE6327HTSA1 is a single PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount PG-SOT23 package with three pins. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical parameters include a transition frequency of 250 MHz, a minimum DC current gain of 420 at 2 mA and 5 V, and a maximum power dissipation of 330 mW. The component operates within a temperature range up to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides valid traceability data. Confirm that the delivered components match the active status indicated in public catalogs, as availability may vary by region.
Select this component when a high-gain PNP transistor is required in a compact SOT-23 footprint. It serves as a direct replacement for standard BC860B variants where higher gain consistency is needed. Consider the 45V rating and 100mA limit for circuit design constraints.
This part belongs to the BC860 series of PNP transistors from Infineon. It shares the same physical package and general electrical characteristics as other members like BC860BE and BC860CE, differing primarily in the guaranteed minimum hFE range. The HTSA1 suffix denotes the specific packaging format used for automated assembly.
Direct substitutes include BC860BE6327HTSA1 and BC860CE6327HTSA1 from the same manufacturer. Verify that the alternative part's hFE range meets the specific circuit requirements, as gain values differ between these series members.