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The BC860CWH6327 is a single PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 100 mA. The device features a transition frequency of 250 MHz and a maximum power dissipation of 330 mW. Packaged in a surface-mount PG-SOT23 (SOT-23-3) housing, it functions within a temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging specifications. Confirm RoHS compliance status through the manufacturer datasheet. Ensure the component matches the required SOT-23-3 footprint for PCB layout compatibility before procurement.
Select this component for designs requiring a single PNP transistor with moderate voltage handling and high-speed switching capabilities. The low saturation voltage aids efficiency in low-power applications. Verify that the 100 mA current rating meets the load requirements of the target circuit application.
This part belongs to the BC860 series of small-signal PNP transistors from Infineon Technologies. The series is designed for general-purpose amplification and switching tasks. The H6327 suffix indicates specific manufacturing lot and packaging details defined by the original equipment manufacturer.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in gain bandwidth or saturation characteristics.