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The BC860CWH6327XTSA1 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device features a dual configuration with a maximum DC collector current of 200 mA. Key voltage ratings include a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component supports a wide operating temperature range from -55 °C to +150 °C.
Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Check for end-of-life notices or obsolescence warnings directly from Infineon channels before procurement planning.
Select this component when a dual PNP BJT is required in an SOT-323-3 package. Ensure the design accommodates the 45 V collector-emitter voltage limit. Verify that the 200 mA continuous collector current meets the load requirements. Consider the thermal management capabilities provided by the small outline transistor package for the intended application environment.
This part belongs to Infineon's BC8xx series of small-signal transistors. These components are widely used in consumer electronics and industrial control systems. The BC860C variant specifically offers higher voltage ratings compared to lower-voltage counterparts in the same family, making it suitable for slightly more demanding power supply or logic interface tasks.
Consult Infineon's official replacement guide for direct equivalents. Generic replacements must match the PNP polarity, SOT-323-3 footprint, and minimum 45 V VCEO rating. Verify pinout compatibility to prevent circuit damage during substitution.