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The BC868TA is a PNP silicon planar medium power transistor manufactured by Diodes Incorporated. It is housed in a SOT-89 surface-mount package designed for high reliability applications. The device features a collector-emitter breakdown voltage exceeding 60V and supports a continuous collector current of 1A with a peak pulse current capability of 2A. Key electrical characteristics include a low equivalent on-resistance (Rce(sat)) of 195mΩ and a high current gain (hFE) characterized up to 2A. The component operates within a temperature range of -55°C to 150°C, ensuring stability in demanding environments.
Verify the specific suffix TA against official Diodes Incorporated documentation to confirm tape-and-reel packaging specifications. Ensure the procurement order explicitly references the BC868TA part number to distinguish it from other SOT-89 variants. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing processes and material compositions.
Select the BC868TA when a PNP transistor with high current gain and low saturation voltage is required in a compact SOT-89 footprint. Consider its AEC-Q101 qualification for automotive deployments where long-term reliability is critical. Compare its 1A continuous current rating against load requirements to ensure adequate thermal headroom under maximum operating conditions.
This component belongs to the FCX series of medium power transistors produced by Diodes Incorporated. It serves as the complementary PNP counterpart to the NPN FCX491 device. Both parts share similar packaging and reliability standards, facilitating balanced push-pull configurations in amplifier designs. The series is engineered for general-purpose applications requiring robust performance in space-constrained PCB layouts.
Public confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' equivalents.