BCF020T

Overview

The BeRex BCF020T is a GaAs Power MESFET chip featuring a 0.3 µm gate length and 200 µm gate width, designed for high OIP3 linearity and low phase noise from DC to 26.5 GHz. At Vds = 8V and Ta = 25°C, it delivers typical P1dB output power of 20.0 dBm at 12 GHz and 20.2 dBm at 18 GHz, with corresponding gains of 13.5 dB and 12.1 dB. PAE reaches 31% at 12 GHz and 34% at 18 GHz under these conditions. The device utilizes SI 3N4 passivation for reliability and requires Au-Sn eutectic die attach.

Feature Summary

• High linearity and low phase noise performance suitable for wideband or narrow-band applications
• Optimized for high gain and medium power output across the DC to 26.5 GHz frequency range
• Utilizes state-of-the-art metallization and silicon nitride passivation for enhanced reliability

Applications

• Commercial RF systems
• Military and Hi-Rel equipment
• Test & Measurement instrumentation

Procurement Notes

Verify component authenticity through official BeRex channels or authorized distributors. Confirm datasheet revision status prior to design finalization, as specifications are subject to change without notice. Ensure handling protocols strictly follow ESD precautions due to GaAs sensitivity. Validate that procurement sources adhere to hazardous waste regulations regarding gallium arsenide content.

Selection Notes

Select this component for designs requiring high OIP3 and low phase noise in the microwave spectrum. Evaluate thermal management carefully, as the maximum channel temperature is limited to 175°C with a thermal resistance of 160 °C/W using Au-Sn attachment. Ensure biasing circuits accommodate the specified drain-source voltage limits and gate current constraints to maintain optimal PAE and prevent permanent damage.

Part Context

The BCF020T belongs to the BeRex family of GaAs Power MESFET chips. It is distinguished by its specific 0.3 x 200 micron recessed gate geometry, which balances high gain with medium power capabilities. Unlike standard logic FETs, this device is engineered specifically for RF power amplification tasks where linearity and noise figure are critical performance metrics.

Replacement Considerations

No public substitute part numbers are documented in the provided datasheet. Designers must evaluate alternative GaAs MESFETs based on matching gate dimensions (0.3 µm x 200 µm), breakdown voltages, and thermal resistance characteristics if replacement is necessary.