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The BeRex BCF040T is a GaAs Power MESFET chip featuring a 0.3 µm gate length and 400 µm gate width, designed for high OIP3 linearity and low phase noise from DC to 26.5 GHz. At Vds = 8V and Ta = 25°C, it delivers typical P1dB output power of 23.0 dBm at 12 GHz with 13 dB gain. Maximum ratings include a drain-source voltage of 12 V, gate-source voltage of -8 V, and total power dissipation of 1.4 W. The device operates within an industrial temperature range and utilizes SI 3N4 passivation for reliability.
Verify the specific datasheet revision (e.g., Rev 1.3 or 1.4a) prior to procurement, as specifications are subject to change without notice. Confirm that the supplier provides chips in standard antistatic Gel-Pak packaging within sealed moisture barrier bags. Ensure handling procedures strictly adhere to ESD precautions and clean room requirements during assembly.
Select this component for designs requiring high OIP3 linearity and low phase noise in GaAs MESFET architectures. Evaluate thermal management capabilities carefully, as the device has a thermal resistance of 100 °C/W with Au-Sn eutectic attachment. Ensure biasing circuits accommodate the specified pinch-off voltage and maximum current limits to maintain stable operation within the absolute maximum ratings.
The BCF040T belongs to the BeRex family of GaAs Power MESFETs. It is distinguished by its recessed gate technology and specific dimensions (0.3 x 400 microns). Unlike packaged ICs, this is a bare die intended for direct mounting on substrates using recommended eutectic die attach methods.
No public substitute part numbers are documented in the official datasheet. Designers should consult BeRex directly for potential alternative devices or updated revisions.