BCG008

Overview

The BeRex BCG008 is an 8W Gallium Nitride (GaN) Power HEMT die featuring a 0.15-micron gate length and 1250-micron gate width, designed for high-gain amplifier applications from DC to 26 GHz. It utilizes state-of-the-art metallization with SI3N4 passivation and is screened for reliability. Typical performance at 12 GHz includes 39.0 dBm saturated output power (P3dB), 9.5 dB saturated gain (G3dB), and 72% Power Added Efficiency (PAE). The device supports both wideband and narrowband configurations.

Feature Summary

• High-power GaN HEMT technology optimized for high gain and efficiency across broad frequency ranges
• SI3N4 passivation and advanced metallization ensuring operational reliability
• Capable of functioning in both wideband and narrowband amplifier architectures

Applications

• Wideband amplifier systems
• Narrowband amplifier systems
• Test and measurement equipment
• Commercial RF applications
• Military and Hi-Rel systems

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement. Confirm that the ordering suffix matches the required commercial or military/Hi-Rel qualification tier. Ensure handling protocols strictly adhere to ESD precautions due to the sensitivity of GaN HEMT dies. Validate that the supplier provides appropriate antistatic Gel-Pak packaging within sealed metallized bags.

Selection Notes

Select the BCG008 when high saturated output power and gain are required up to 26 GHz. Evaluate thermal resistance requirements carefully, as the device dissipates significant heat. Ensure biasing circuits support the specified drain-source voltage and current limits. Consider wire bonding specifications for optimal performance and verify compatibility with recommended eutectic die attach methods using Au/Sn pre-forms.

Part Context

The BCG008 belongs to BeRex's portfolio of Gallium Nitride Power HEMTs. These devices leverage recessed gate technology to deliver high power density and efficiency. The product line targets demanding RF environments requiring robust performance in both commercial and specialized military sectors.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Cross-referencing requires matching gate dimensions, power ratings, and frequency response characteristics with alternative GaN HEMT dies.

FAQ

What is the maximum Drain-Source Voltage rating?

The absolute maximum Drain-Source Voltage (Vds) rating is 90 V.

How should the device be attached during assembly?

BeRex recommends eutectic die attach using Au/Sn (80/20) pre-forms, performed at temperatures no hotter than 300°C for less than 10 seconds.

What is the typical Saturated Output Power at 12 GHz?

The typical Saturated Output Power (P3dB) at 12 GHz is 39.0 dBm under conditions of Vds = 28V and Id = 60mA.