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The BeRex BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT featuring a 0.15µm by 150µm recessed gate architecture. It operates within a broad frequency range of 1000 MHz to 26 GHz, housed in a 70 mil ceramic Micro-X surface-mount package. Key electrical characteristics at Vds = 2V and Ids = 10mA include a typical noise figure of 0.46 dB and associated gain of 11.5 dB at 12 GHz. The device supports single positive voltage operation with a maximum drain-source voltage of 5 V and total power dissipation of 200 mW.
Verify the specific revision level against the latest datasheet before procurement. Confirm that the ordering suffix matches the required tape and reel or cut tape packaging format. Ensure the component meets RoHS2 compliance requirements for the intended manufacturing process. Validate thermal management capabilities given the 280 °C/W thermal resistance rating.
Select this component for designs requiring ultra-low noise figures in the microwave spectrum up to 26 GHz. The 70 mil ceramic package provides a robust mechanical solution for surface-mount assembly. Consider the 5 V maximum drain-source voltage when designing bias networks. Evaluate the 200 mW total power dissipation limit for thermal constraints in high-density layouts.
This part belongs to the BeRex BCL015 series of GaAs pHEMT devices. The series utilizes a consistent 0.15µm gate length technology optimized for super low noise applications. The BCL015-70 specifically denotes the 70 mil Micro-X package variant, distinguishing it from other footprint options within the same technological family.
No public confirmed substitute part numbers are documented in the provided datasheet.