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The BeRex BCL015 is a GaAs Super Low Noise Enhancement Mode pHEMT featuring a 0.15µm by 150µm recessed gate architecture. It operates across a broad frequency range of 1000 MHz to 26 GHz with single positive voltage operation. At 12 GHz, the device provides a typical noise figure of 0.43 dB and an associated gain of 12.0 dB under Vds = 2V and Id = 10mA conditions. The saturated drain current (Idss) is specified between 0.15 mA and 0.25 mA, while the maximum drain current reaches 85 mA. The component supports high input power up to 20 dBm and includes thermal resistance data of 280 °C/W.
Verify the specific revision status of the datasheet against the manufacturer's official records before finalizing design integration. Confirm that the bare die form factor aligns with your assembly capabilities, as the component requires specialized wire bonding and die attach procedures. Ensure compliance with ESD handling protocols and hazardous material disposal regulations for Gallium Arsenide during procurement and manufacturing stages.
Select this component when ultra-low noise figures are critical in the 1000 MHz to 26 GHz spectrum. The device is suitable for designs requiring high associated gain and robust input power handling. Consider the bare die package constraints and the necessity for precise wire bonding configurations to achieve the specified electrical characteristics. Evaluate thermal management requirements given the stated thermal resistance value.
The BCL015 belongs to BeRex's lineup of GaAs Super Low Noise pHEMT devices. It is manufactured using a 0.15µm process technology optimized for high-frequency performance. As a bare die product, it is intended for integration into custom microwave integrated circuits or hybrid modules rather than standalone surface-mount applications.
No public confirmed substitute part numbers are available in the provided documentation.