BCM846BS

Overview

The BCM846BS is a dual NPN bipolar junction transistor array manufactured by Diotec Semiconductor in an SOT-363 surface-mount package. It features a collector-emitter breakdown voltage of 65V and a maximum DC collector current of 100mA, with peak currents reaching 200mA. The device provides a minimum DC current gain (hFE) of 200 at 2mA and 5V, supporting a transition frequency of 100MHz. Total power dissipation is rated at 250mW, and the operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Dual NPN transistors with matched DC current gain
• Matched base-emitter voltage for precision applications
• Compliant with RoHS, REACH, and Conflict Minerals regulations

Applications

• Current mirrors
• Differential amplifiers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm compliance with specific environmental standards such as RoHS and REACH requirements before integration. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Select this component when precise matching between two NPN transistors is required within a single package. Consider the 65V collector-emitter voltage rating and 100mA continuous current limit for circuit design. Evaluate thermal resistance characteristics for heat dissipation planning in compact layouts.

Part Context

This part belongs to the BCM846/BCM847 series of matched NPN transistor arrays. It shares similar electrical characteristics with the BCM847BS but differs in voltage ratings. Both variants utilize the same SOT-363 package and are designed for commercial and industrial grade applications requiring high reliability.

Replacement Considerations

Direct substitutes include the BCM847BS, which offers identical packaging and functionality but with a lower collector-emitter voltage rating of 45V. Verify voltage headroom requirements before substitution.