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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA 6-TSSOP
- Series：BCM
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BCM847BSH-Q is a matched NPN/NPN double transistor in an SOT363 (SC-88) surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The DC current gain ranges from 200 to 450 at 2 mA, with tight matching between the two transistors: current gain ratio within 0.95 to 1.05 and base-emitter voltage difference under 2 mV. It supports junction temperatures up to 175 °C and is qualified according to AEC-Q101 for automotive applications.
Feature Summary
- Low collector capacitance and low collector-emitter saturation voltage
- High-temperature operation capability up to 175 °C
- Tight current gain and base-emitter voltage matching between transistors
- No mutual interference between the internal transistors
Applications
- Current mirror circuits
- Differential amplifier configurations
Procurement Notes
Verify the specific suffix 'QF' against the manufacturer's official ordering information to confirm the tape-and-reel packaging format and quantity. Ensure the design accounts for the 0.65 mm pitch and 2.1 x 1.25 mm body dimensions of the SOT363 package during PCB layout.
Selection Notes
Select this component when precise matching between two NPN transistors is required in a minimal footprint. The high thermal stability up to 175 °C makes it suitable for demanding environments where standard double transistors might fail. Verify that the 100 mA current limit meets the application requirements.
Part Context
This device belongs to Nexperia's automotive-grade discrete semiconductor portfolio. It serves as a drop-in replacement for standard double transistors while offering enhanced performance characteristics such as lower capacitance and superior matching accuracy for precision analog applications.
Replacement Considerations
The PNP/PNP complement is the BCM857BSH-Q. Designers requiring a complementary pair should verify the availability and specifications of the BCM857BSH-Q alongside this NPN device.
FAQ
What is the maximum junction temperature for the BCM847BSH-Q?
The maximum junction temperature is 175 °C.
How is the base-emitter voltage matching defined for this device?
The base-emitter voltage difference (VBE1−VBE2) is specified to be no more than 2 mV under test conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Is this component suitable for automotive use?
Yes, the BCM847BSH-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
