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The BCM847DS-QX is an NPN dual transistor manufactured by Nexperia, housed in a TSOP-6 (SOT457) surface-mount package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device has a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 380 mW, with a transition frequency (fT) of 250 MHz. The minimum DC current gain (hFE) is 200 at 2 mA and 5 V. Operating temperatures range from -65°C to +150°C.
Verify the specific suffix 'QX' against official Nexperia documentation to confirm tape-and-reel packaging details and ensure compliance with RoHS directives. Confirm that the automotive qualification aligns with target application requirements before finalizing procurement specifications.
Select this component when a dual NPN topology is required in a small outline package. The high hFE and fT values make it suitable for general-purpose signal handling. Ensure thermal management supports the 380 mW dissipation limit in the intended enclosure environment.
This part belongs to the BCM847 series of dual transistors designed for surface-mount technology. It serves as a complementary solution to single-transistor variants like the BC847, offering integrated dual functionality in a footprint optimized for automated assembly processes.
Direct substitutes include the BCM847DS,115 variant. Verify pinout compatibility and electrical parameter equivalence before implementing any cross-reference replacements in existing circuit designs.