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The BCM856BSH is a PNP/PNP matched double transistor manufactured by Nexperia, housed in a SOT363 (SC-88) TSSOP6 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per transistor. The device offers a DC current gain (hFE) ranging from 200 to 450 at -2 mA. Key electrical characteristics include a low collector capacitance of 1.8 pF and a collector-emitter saturation voltage of 200 mV at -100 mA. The component supports high-temperature applications up to 175 °C junction temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and manufacturing site codes. Confirm RoHS compliance status through the latest product data sheet before procurement. Ensure the design accounts for the absolute maximum ratings to prevent permanent damage during operation.
Select this component when matched PNP transistors are required in a compact SOT363 footprint. Consider the -65 V breakdown voltage and -100 mA current limits for circuit design. Evaluate the thermal resistance values if operating near the 175 °C junction temperature limit. Verify compatibility with standard double transistor footprints if used as a drop-in replacement.
The BCM856BSH belongs to Nexperia's series of matched double transistors designed for precision analog applications. It serves as the PNP counterpart to the NPN/NPN BCM846BSH. Both devices utilize the same SOT363 package to save board space while maintaining matched electrical characteristics essential for differential pairs and current mirrors.
BCM846BSH is the NPN/NPN complement within the same family.