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The BCP51-16 H6778 is a PNP silicon audio frequency transistor from Infineon Technologies, designed for AF driver and output stages. It operates in an SOT223 package with four pins. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V, a continuous collector current (IC) of 1 A, and a peak collector current (ICM) of 1.5 A. The device features a maximum total power dissipation (Ptot) of 2 W at a case temperature up to 120°C. The DC current gain (hFE) ranges from 100 to 250 at IC = 150 mA and VCE = 2 V. Transition frequency (fT) is typically 125 MHz.
Verify the specific ordering suffix 'H6778' against official Infineon documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the component matches the standard BCP51-16 electrical characteristics defined in the datasheet. Confirm RoHS compliance status and material content declarations are available for the specific batch code.
Select this component when designing circuits requiring a PNP transistor with a 45 V collector-emitter voltage rating and high current capability. The BCP51-16 variant offers a specific hFE range of 100 to 250, suitable for applications needing consistent gain. Consider the SOT223 package for surface-mount assembly and thermal management requirements up to 2 W dissipation.
This part belongs to the BCP51...BCP53... family of PNP Silicon AF Transistors. It is complementary to the NPN types BCP54...BCP56. The BCP51 series is characterized by a 45 V VCEO rating, distinguishing it from the higher voltage BCP52 (60 V) and BCP53 (80 V) variants within the same package and pin configuration.
Direct replacements within the same family include BCP51, BCP51-10, and BCP51-16. For different voltage ratings, consider BCP52 or BCP53. Complementary NPN equivalents are BCP54, BCP54-16, etc.