BCP 54-16 H6779

Description：TRANS NPN 45V 1A PG-SOT223-4
Series：-

SKU:3ba478d58b14 Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 1A PG-SOT223-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
Power - Max：2 W
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Supplier Device Package：PG-SOT223-4
Grade：-
Qualification：-

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BCP 54-16 H6779

Overview

The Infineon BCP54-16 H6779 is an NPN silicon audio frequency transistor designed for driver and output stages. It operates within a collector-emitter voltage of 45 V and supports a continuous collector current of 1 A with a peak current of 1.5 A. The device features a DC current gain ranging from 100 to 250 at 150 mA, ensuring high amplification efficiency. It exhibits a low collector-emitter saturation voltage of 0.5 V max at 500 mA. Total power dissipation reaches 2 W at case temperatures up to 120°C, with a junction temperature limit of 150°C.

Feature Summary

Optimized for audio frequency driver and output stage applications
High collector current capability supporting up to 1 A continuous operation
Low collector-emitter saturation voltage for improved efficiency
Qualified according to AEC Q101 automotive standards

Applications

Audio frequency driver stages
Audio frequency output stages
General-purpose switching applications requiring high current

Procurement Notes

Verify the specific ordering suffix H6779 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure the component meets AEC Q101 requirements if used in automotive contexts. Cross-reference the datasheet revision date to validate electrical characteristics. Confirm thermal resistance parameters match your heat sinking design constraints before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring high current handling and low saturation voltage in an SOT223 package. Consider the 45 V collector-emitter voltage rating for appropriate headroom. Evaluate the DC current gain range (100-250) for amplifier linearity needs. Verify thermal management capabilities given the 2 W power dissipation limit and 15 K/W junction-to-solder-point thermal resistance.

Part Context

This part belongs to the BCP54...-BCP56... family of NPN silicon AF transistors manufactured by Infineon Technologies. It is complemented by PNP types such as the BCP51...BCP53 series. The device utilizes the SOT223 package configuration, providing four pins for base, collector, and emitter connections. It is Pb-free and RoHS compliant, suitable for modern electronic manufacturing processes.

Replacement Considerations

Complementary PNP types include BCP51, BCP53, and BCP55. Other variants in the family are BCP56-10 and BCP56-16. Verify pinout compatibility and electrical ratings before substituting with other general-purpose NPN transistors.