BCP020C

$14.52

Description：RF MOSFET PHEMT FET 8V DIE
Series：-

SKU:c8aa4bb32552 Category: RF FETs, MOSFETs Brand: BeRex Inc

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 8V DIE
Series：-
Mfr：BeRex Inc
Package：Tray
Technology：pHEMT FET
Frequency：6GHz ~ 18GHz
Gain：14dB
Voltage - Test：8 V
Current Rating (Amps)：80mA
Noise Figure：1.05dB
Current - Test：30 mA
Power - Output：22dBm
Voltage - Rated：12 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

Download product information

BCP020C

Overview

The BeRex BCP020C is a GaAs Power pHEMT chip featuring a 0.25 µm by 200 µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. At 12 GHz with Vds = 8V and Id = 30mA, it delivers a typical P1dB output power of 22 dBm, gain of 14 dB, and PAE of 55%. The device exhibits a noise figure of 1.05 dB at 12 GHz. Maximum ratings include a drain-source voltage of 12V, gate-source voltage of -6V, and total power dissipation of 1.0 W. Thermal resistance is 155 °C/W using Au-Sn eutectic attachment.

Feature Summary

Utilizes state-of-the-art metallization with SI3N4 passivation for enhanced reliability
Optimized for both wideband (6-18 GHz) and narrow-band RF applications
Screened to ensure consistent performance in commercial and military environments

Applications

Commercial RF systems
Military and High-Reliability equipment
Test and Measurement instrumentation

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing designs. Confirm that the ordering suffix matches the required packaging or screening level if applicable. Ensure all electrical parameters align with the current datasheet specifications provided by BeRex Inc. to avoid integration issues during production.

Selection Notes

Select this component when designing circuits requiring high gain and moderate power output across the microwave spectrum. Consider the thermal management requirements carefully, as the device dissipates up to 1.0 W. Verify biasing conditions match the tuned-for-power specifications to achieve optimal linearity and efficiency metrics.

Part Context

This part belongs to the BCP series of GaAs Power pHEMT chips manufactured by BeRex Inc. These devices are engineered for robust performance in demanding RF environments. The BCP020C specifically targets applications needing reliable amplification capabilities within the C, X, and Ku bands.