BCP040C

$16.75

Description：RF MOSFET PHEMT FET 8V DIE
Series：-

SKU:47ecf6fc701e Category: RF FETs, MOSFETs Brand: BeRex Inc

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Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 8V DIE
Series：-
Mfr：BeRex Inc
Package：Tray
Technology：pHEMT FET
Frequency：6GHz ~ 18GHz
Gain：13.5dB
Voltage - Test：8 V
Current Rating (Amps)：150mA
Noise Figure：1.05dB
Current - Test：60 mA
Power - Output：25.5dBm
Voltage - Rated：12 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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BCP040C

Overview

The BeRex BCP040C is a GaAs Power pHEMT featuring a nominal 0.25-micron by 400-micron recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. It utilizes state-of-the-art metallization with SI3N4 passivation and is screened for reliability. At 12 GHz with Vds = 8V and Ids = 60mA, it delivers a typical P1dB output power of 25.5 dBm, gain of 13.5 dB, and PAE of 60%. The device supports both wideband (6-18 GHz) and narrow-band configurations.

Feature Summary

High-efficiency heterojunction power FET architecture
Suitable for wideband or narrow-band RF applications
SI3N4 passivation for enhanced reliability

Applications

Commercial RF systems
Military and Hi-Rel equipment
Test & Measurement instrumentation

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the ordering suffix matches the required electrical characteristics, as variations may exist within the product family. Ensure all handling procedures strictly follow ESD precautions during assembly.

Selection Notes

Select this component when high gain and medium power are required across the DC to 26.5 GHz range. Consider the thermal resistance of 104 °C/W and the requirement for Au-Sn eutectic die attach. Verify bias conditions align with the specified maximum ratings to ensure optimal performance and longevity.

Part Context

This part belongs to the BeRex GaAs pHEMT portfolio, specifically engineered for microwave frequencies. It represents a specialized semiconductor solution for RF front-end modules where performance in the C, X, Ku, and K bands is critical.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the recommended die attach method?

BeRex recommends using Au-Sn (80%-20%) eutectic pre-forms. The operation should be performed at temperatures no hotter than 300°C for less than 60 seconds.