BCP060C

Overview

The BeRex BCP060C is a GaAs High Electron Mobility Transistor (HEMT) featuring a 0.25 µm by 600 µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. It utilizes SI3N4 passivation and state-of-the-art metallization for reliability. Typical performance at 12 GHz includes 27.5 dBm output power, 12 dB gain, and 60% PAE under Vds=8V and Id=90mA conditions. The device supports both wideband (6-18 GHz) and narrow-band configurations.

Feature Summary

• High-efficiency heterojunction power FET architecture
• Suitable for wideband or narrow-band RF designs
• SI3N4 passivated with advanced metallization

Applications

• Commercial RF systems
• Military and Hi-Rel equipment
• Test & Measurement instrumentation

Procurement Notes

Verify the specific revision of the datasheet against the manufacturer's official records before finalizing procurement. Confirm that the ordering suffix matches the exact electrical tolerance and packaging requirements. Ensure all handling procedures strictly follow ESD precautions during assembly.

Selection Notes

Select this component when designing circuits requiring high gain and medium power across the DC to 26.5 GHz range. Evaluate thermal resistance and maximum ratings carefully to ensure operation within safe limits. Consider the need for precise wire bonding lengths as specified in the documentation.

Part Context

This part belongs to the BeRex BCP series of GaAs pHEMT chips. It is specifically engineered for microwave frequencies where high efficiency and reliable performance are critical. The device is intended for use in various RF front-end modules and amplifier stages.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Consult BeRex technical support for potential alternatives if sourcing constraints exist.

FAQ

What is the recommended die attach method?

BeRex recommends eutectic die attach using Au-Sn (80%-20%) pre-forms, performed at temperatures no hotter than 300°C for less than 60 seconds.

How should the device be handled to prevent damage?

Proper ESD precautions must be taken, including grounding all work surfaces, assembly equipment, and operators, as GaAs FETs are highly sensitive to electrostatic discharge.

What are the typical S-parameter reference planes?

S-parameters include bond wires, and reference planes are located at the edge of the substrates shown on the Wire Bonding Information figure.