BCP080C

Overview

The BeRex BCP080C is a GaAs Power pHEMT chip featuring a 0.25µm by 800µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. At 12 GHz with Vds=8V and Ids=120mA, it delivers typical P1dB output power of 28.5 dBm, gain of 11 dB, and PAE of 60%. At 18 GHz under identical conditions, performance includes 26.5 dBm output power, 8.5 dB gain, and 45% PAE. The device supports wideband (6-18 GHz) or narrow-band configurations.

Feature Summary

• High-efficiency heterojunction power FET architecture
• Suitable for both wideband and narrow-band RF applications
• SI3N4 passivation for enhanced reliability

Applications

• Commercial RF systems
• Military and Hi-Rel equipment
• Test & Measurement instrumentation

Procurement Notes

Verify the specific revision number on the datasheet before ordering, as specifications are subject to change without notice. Confirm that the supplier provides the standard antistatic Gel-Pak packaging within sealed moisture barrier bags. Ensure handling protocols meet ESD precautions and clean room requirements during assembly.

Selection Notes

Select this component when designing circuits requiring high gain and medium power across the DC to 26.5 GHz range. Consider the thermal resistance of 57°C/W and recommend Au-Sn eutectic die attach for optimal heat dissipation. Evaluate biasing requirements carefully, noting the maximum continuous drain-source voltage rating of 12V.

Part Context

This part belongs to the BCP series of GaAs Power pHEMT chips manufactured by BeRex, Inc. It utilizes state-of-the-art metallization processes and is screened to assure reliability for demanding RF environments.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What type of die attach is recommended for the BCP080C?

BeRex recommends using 'Eutectic' die attach with Au-Sn (80%-20%) pre-forms. Conductive epoxy may also be acceptable for low-power devices.

How should the BCP080C be handled to prevent damage?

GaAs FETs are sensitive to Electrostatic Discharge (ESD). Proper ESD precautions must be taken, ensuring all work surfaces, assembly equipment, and operators are properly grounded.

What are the wire bonding specifications for this chip?

Use 1 mil diameter Au bonding wires: one 600µm x 250µm wire for Gate, one 400µm x 250µm wire for Drain, and four 250µm x 300µm wires for Source to ground plate.