BCP160C

Overview

The BeRex BCP160C is a GaAs Power pHEMT featuring a 0.25 µm by 1600 µm recessed gate, designed for high-gain and medium-power applications from DC to 26.5 GHz. At 12 GHz with Vds = 8V and Id = 240mA, it delivers a typical P1dB of 31.5 dBm, gain of 10 dB, and PAE of 55%. At 18 GHz under identical conditions, output power is 30.5 dBm, gain is 7.5 dB, and PAE is 45%. The device has a saturated drain current (Idss) range of 340–680 mA, transconductance of 620 mS, and thermal resistance of 30 °C/W using Au-Sn eutectic attachment.

Feature Summary

• Utilizes state-of-the-art metallization with SI3N4 passivation for enhanced reliability
• Optimized for wideband (6-18 GHz) or narrow-band RF applications
• Screened to ensure operational reliability in demanding environments

Applications

• Commercial RF systems
• Military and High-Reliability equipment
• Test and Measurement instrumentation

Procurement Notes

Verify the specific revision status against the October 2018 datasheet before integration. Confirm that assembly protocols strictly adhere to the recommended Au-Sn eutectic die attach parameters and ESD handling precautions. Ensure the final design accounts for the specified wire bonding dimensions and maximum ratings to maintain device integrity.

Selection Notes

Select this component when high gain and medium power are required across the DC to 26.5 GHz spectrum. Evaluate the 30 °C/W thermal resistance and 5.0 W total power dissipation limits against your cooling strategy. Consider the 12V absolute maximum drain-source voltage and -6V gate-source voltage constraints during bias circuit design.

Part Context

This part belongs to the BCP series of high-efficiency heterojunction power FET chips manufactured by BeRex, Inc. It represents a specialized GaAs pHEMT technology tailored for microwave frequencies. The product line focuses on providing robust performance for both commercial and military-grade RF front-end modules.

Replacement Considerations

No public substitute part numbers are documented in the official datasheet. Designers should consult BeRex directly for potential cross-reference options or updated family members.

FAQ

What is the recommended die attach method?

BeRex recommends using Au-Sn (80%-20%) eutectic pre-forms. The process requires accurate temperature control, with parts no hotter than 300°C for less than 60 seconds, using inert forming gas or clean dry nitrogen.

How many bond wires are required for the source connection?

Six 1 mil diameter gold bond wires are required for the source-to-ground plate connection, with a specified length of 250 µm and height of 300 µm.

Is this device suitable for life support applications?

No. BeRex products are not authorized for use as critical components in life support devices without express written approval from BeRex.