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Product Detailed Parameters
- Description：TRANS PNP 45V 1A SOT-223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：650 mW
- Frequency - Transition：145MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The Nexperia BCP51-16-QF is a PNP medium power transistor from the BCP51-Q series, housed in a SOT223 (SC-73) surface-mounted plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current rating of -1 A, with a peak pulse current capability of -2 A. The device offers a DC current gain (hFE) range of 100 to 250 at VCE = -2 V and IC = -150 mA. Total power dissipation reaches up to 1.35 W on an FR4 PCB with a 6 cm² collector pad. Qualified under AEC-Q101, it supports junction temperatures up to 150 °C.
Feature Summary
- Automotive qualified according to AEC-Q101 standard for high reliability
- High current handling capability suitable for power applications
- Three distinct current gain selections available within the series
- High power dissipation capacity enabled by enhanced heatsink design
Applications
- Linear voltage regulators
- High-side switches
- Battery-driven devices
- Power management circuits
- MOSFET drivers
- Amplifiers
Procurement Notes
Verify the specific ordering suffix matches the required binning for DC current gain. Confirm the package variant corresponds to the SOT223 form factor. Ensure the automotive qualification status aligns with project requirements. Check the latest datasheet revision for any updates to thermal characteristics or marking codes before finalizing procurement specifications.
Selection Notes
Select this component when a PNP transistor with 45 V blocking capability and 1 A continuous current is needed in a compact SMD footprint. The BCP51-16-Q variant provides a guaranteed hFE range of 100 to 250, offering higher gain consistency than the standard BCP51-Q. Consider the thermal resistance values based on the intended PCB copper area for adequate heat dissipation in high-power scenarios.
Part Context
This part belongs to the BCP51-Q series of PNP medium power transistors designed for robust performance in demanding environments. The series utilizes a leadless SOT223 package to maximize thermal conductivity and board space efficiency. It is engineered to meet stringent automotive electronics standards, ensuring longevity and stability in vehicle electrical systems.
Replacement Considerations
Direct substitutes include other parts from the BCP51-Q family such as BCP51-Q and BCP51-10-Q, provided the specific current gain binning requirements are met. Verify pinout compatibility and thermal performance characteristics against the original design constraints before substitution.
FAQ
What is the DC current gain range for the BCP51-16-Q?
The DC current gain (hFE) for the BCP51-16-Q ranges from 100 to 250 when measured at VCE = -2 V and IC = -150 mA.
Is the BCP51-16-QF suitable for automotive applications?
Yes, the BCP51-Q series is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum peak collector current?
The maximum peak collector current (ICM) is -2 A for a single pulse duration of tp ≤ 1 ms.
