BCP51E6327HTSA1

BCP51E6327HTSA1

  • Description:TRANS PNP 45V 1A PG-SOT223-4-10
  • Series:-

SKU:033a5019855d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 45V 1A PG-SOT223-4-10
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:125MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:PG-SOT223-4-10
  • Grade:-
  • Qualification:-

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BCP51E6327HTSA1

Overview

The BCP51E6327HTSA1 is a single NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon planar technology and is housed in an SOT-223-4 surface-mount package. The device features a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 1 A. Key electrical parameters include a DC current gain (hFE) of 40 at 150 mA, with a collector-emitter saturation voltage of 500 mV under specified conditions. The component is designed for general switching applications within standard operating temperature ranges.

Feature Summary

  • Integrated single NPN configuration for simplified circuit design
  • High current handling capability suitable for power switching loads
  • Surface-mount packaging optimized for automated assembly processes

Applications

  • General purpose switching circuits
  • Power management modules
  • Load control interfaces

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the official Infineon documentation before integration. Confirm that the SOT-223-4 package dimensions align with the target PCB footprint. Ensure compliance with RoHS directives and check for any end-of-life notifications or discontinuation notices from the manufacturer to mitigate supply chain risks during production planning.

Selection Notes

Select this component when a robust NPN transistor with 1 A current capacity and 45 V voltage rating is required in a compact surface-mount form factor. Consider the thermal performance of the SOT-223-4 package relative to the expected power dissipation in the application. Evaluate the hFE range and saturation voltage requirements to ensure compatibility with the driving logic levels and load specifications of the target system design.

Part Context

This part belongs to Infineon's lineup of discrete bipolar junction transistors designed for commercial and industrial electronics. The BCP51 series provides reliable switching performance in standardized packages. As a single NPN device, it serves as a fundamental building block for amplifier stages and switch drivers within broader semiconductor product families offered by the manufacturer.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference guides or authorized distributor databases for verified equivalent components that match the electrical specifications and package outline.

BCP51E6327HTSA1BCP51E6327HTSA1

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