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Product Detailed Parameters
- Description：TRANS PNP 60V 1A SOT-223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.3 W
- Frequency - Transition：140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BCP52-10TF is a PNP medium power transistor from the Nexperia BCP52T series, housed in an SOT223 (SC-73) surface-mounted plastic package. It features a collector-emitter voltage of -60 V and a continuous collector current capability of -1 A, with a peak pulse current of -2 A. The device offers three current gain selections; the -10 variant specifies a DC current gain range of 63 to 160 at VCE = -2 V and IC = -150 mA. It is qualified under the AEC-Q101 standard for automotive applications.
Feature Summary
- High collector current capability for both continuous and pulsed operations
- Three distinct current gain selection options available within the series
- High power dissipation capability suitable for demanding thermal environments
- Qualified according to the AEC-Q101 automotive electronics standard
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify that the ordering suffix matches the specific current gain bin required for your design, as the datasheet defines distinct gain ranges for the -10 and -16 variants. Confirm the package type corresponds to the SOT223 footprint on your PCB layout. Ensure the application environment adheres to the specified ambient temperature limits and thermal resistance conditions outlined in the data sheet to maintain reliable operation.
Selection Notes
Select the BCP52-10TF when a PNP transistor with a guaranteed DC current gain between 63 and 160 is required. This variant differs from the standard BCP52T which allows gains up to 250. Consider the thermal resistance values provided for different PCB copper areas when designing heat dissipation strategies. Verify that the -60 V breakdown voltage meets the circuit requirements.
Part Context
This component belongs to the Nexperia BCP52T series of PNP medium power transistors. The series includes complementary NPN devices such as the BCP55T. These transistors are designed for general-purpose switching and amplification tasks in compact surface-mount configurations, providing a balance of current handling and power dissipation capabilities.
Replacement Considerations
BCP55-10T
FAQ
What is the DC current gain range for the BCP52-10TF?
The DC current gain (hFE) for the BCP52-10T variant ranges from 63 to 160, measured at VCE = -2 V and IC = -150 mA.
Is this component suitable for automotive applications?
Yes, the BCP52T series has been qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
What is the maximum peak collector current?
The maximum peak collector current (ICM) is -2 A for a single pulse duration of tp ≤ 1 ms.
