BCP5216E6327HTSA1

Overview

The BCP5216E6327HTSA1 is a PNP silicon audio frequency transistor designed for driver and output stages. It features a collector-emitter voltage of 60 V, a continuous collector current of 1 A, and a peak collector current of 1.5 A. The device exhibits a low collector-emitter saturation voltage of 0.5 V at 500 mA and a transition frequency of 125 MHz. DC current gain ranges from 100 to 250 at 150 mA. It is housed in an SOT-223 package with the collector connected to the exposed pad.

Feature Summary

• Optimized for audio frequency driver and output stages
• High collector current capability up to 1 A
• Low collector-emitter saturation voltage
• Qualified according to AEC Q101 standards

Applications

• Audio frequency driver stages
• Audio frequency output stages

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the BCP52-16 electrical profile, specifically the 60 V rating and hFE range of 100 to 250. Confirm that the marking corresponds to BCP52-16 on the SOT-223 package.

Selection Notes

Select this component when a PNP transistor with a 60 V collector-emitter voltage is required for audio applications. It is suitable for designs needing high collector current handling up to 1 A and low saturation voltage. Consider complementary NPN types like the BCP54...BCP56 series for push-pull configurations.

Part Context

This part belongs to the BCP51...BCP53 family of PNP silicon AF transistors manufactured by Infineon Technologies. The BCP52 variant specifically provides a 60 V breakdown voltage, distinguishing it from the 45 V BCP51 and 80 V BCP53 models within the same product line.

Replacement Considerations

Direct substitutes include other manufacturers' BCP52-16 equivalents or generic PNP transistors matching the 60 V, 1 A, and SOT-223 specifications. Verify pinout compatibility and thermal resistance characteristics before substitution.