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The BCP5216H6327XTSA1 is a PNP silicon audio frequency transistor from the BCP52 series, manufactured by Infineon Technologies. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device operates within a junction temperature range of -65 °C to +150 °C and dissipates up to 2 W of power. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at IC = 150 mA, a transition frequency (fT) of 125 MHz, and a maximum collector-emitter saturation voltage of 0.5 V.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-223 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest datasheet revision notes before finalizing procurement orders.
Select this component when a PNP transistor with 60 V breakdown and 1 A continuous current is required. The BCP52 variant offers higher voltage tolerance compared to the BCP51. Consider the complementary NPN types BCP54 or BCP56 if push-pull configurations are needed. Verify thermal resistance parameters for heat dissipation planning in high-power scenarios.
This part belongs to the BCP51/BCP52/BCP53 family of PNP silicon transistors designed for audio frequency applications. The BCP52 specifically provides a 60 V collector-emitter voltage rating, distinguishing it from the 45 V BCP51 and 80 V BCP53 variants. All members share similar pin configurations and package styles, facilitating design flexibility within the same product line.
Complementary NPN types include BCP54, BCP56. Other PNP options in the series are BCP51 and BCP53.