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The BCP5216TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 surface-mount package. It features a continuous collector current of -1 A and a peak pulse current of -2 A. The device provides a collector-emitter breakdown voltage (BVCEO) of -60 V and a collector-base breakdown voltage (BVCBO) of -60 V. It supports a maximum power dissipation of 2 W at +25°C ambient temperature. The transition frequency (fT) is specified at 150 MHz under standard test conditions.
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure that the procurement channel sources products directly from authorized distributors to maintain compliance with quality standards. Confirm that the delivered components match the exact part number marking codes defined in the manufacturer's datasheet to avoid counterfeit risks.
Select this component when a PNP transistor with -60 V collector-emitter voltage and -1 A continuous current rating is required. The '16' designation indicates a specific DC current gain group suitable for precise amplification tasks. Consider the SOT-223 package dimensions for thermal management and PCB layout constraints. Verify compatibility with complementary NPN types like the BCP55 series if push-pull configurations are utilized.
This component belongs to the BCP51/52/53 family of PNP medium power transistors designed for general-purpose applications. The BCP52 variant specifically targets systems requiring -60 V breakdown voltage ratings. It serves as a complementary counterpart to the BCP54, 55, and 56 NPN transistor series, facilitating balanced design approaches in amplifier and switching circuit topologies.
BCP52TA
The BCP5216TA belongs to Gain Group 16, which specifies a minimum hFE of 100 and a maximum hFE of 250 at IC = -150mA and VCE = -2V.
Yes, the BCP5216TA is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
The maximum operating junction temperature (TJ) is +150 °C.