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Product Detailed Parameters
- Description：TRANS PNP 60V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：125MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The BCP52TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 surface-mount package. It features a maximum continuous collector current of -1 A and a peak pulse current of -2 A. The device provides a collector-emitter breakdown voltage (BVCEO) of -60 V and a collector-base breakdown voltage (BVCBO) of -60 V. It supports a power dissipation of 2 W at +25°C ambient temperature with a thermal resistance from junction to ambient of 62 °C/W. The transition frequency (fT) is specified at 150 MHz under standard test conditions.
Feature Summary
- High current capability with -1 A continuous collector current and -2 A peak pulse current support.
- Low saturation voltage performance, achieving less than -500 mV at -0.5 A collector current.
- Qualified to AEC-Q101 standards for high reliability and capable of PPAP submission.
- Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Applications
- Medium power switching or amplification applications
- AF driver and output stages
- Linear voltage regulators
- High-side switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm reel size, tape width, and quantity per reel. Ensure compliance requirements such as AEC-Q101 qualification and PPAP capability are explicitly stated for the intended application environment. Cross-reference the marking code on the component body with the datasheet table to validate the exact part variant received.
Selection Notes
Select this component when a PNP transistor requires -60 V collector-emitter voltage and -1 A continuous current handling in an SOT-223 package. Consider the 2 W power dissipation limit and the 62 °C/W thermal resistance for heat management design. Verify that the required gain group aligns with the available options for the BCP52 series.
Part Context
The BCP52TA belongs to the BCP 51/52/53 family of PNP medium power transistors designed for surface-mount applications. It serves as the complementary counterpart to the NPN BCP54, BCP55, and BCP56 types within the same product line. All variants share identical mechanical dimensions and packaging specifications while differing in their voltage ratings and gain groupings.
Replacement Considerations
BCP5210TA
FAQ
What is the maximum collector-emitter breakdown voltage for the BCP52TA?
The maximum collector-emitter breakdown voltage (BVCEO) for the BCP52TA is -60 V, measured at a collector current of -10 mA.
Is the BCP52TA qualified for automotive applications?
Yes, the BCP52TA is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
What is the typical transition frequency (fT) of the BCP52TA?
The transition frequency (fT) is typically 150 MHz, measured at a collector current of -50 mA and a collector-emitter voltage of -10 V.
