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Product Detailed Parameters
- Description：TRANS PNP 80V 1A SOT-223
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：2.2 W
- Frequency - Transition：100MHz
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BCP53-10HX is a PNP medium power transistor housed in an SOT223 (SC-73) surface-mounted device package. It features a collector-emitter voltage of -80 V and a continuous collector current of -1 A, with a peak pulse capability of -2 A. The DC current gain (hFE) ranges from 63 to 160 at VCE = -2 V and IC = -150 mA. Thermal resistance from junction to ambient is 207 K/W on a standard FR4 PCB. The transition frequency is typically 140 MHz, and the maximum operating temperature reaches 175 °C.
Feature Summary
- High collector current capability for sustained and pulsed operation
- Three distinct current gain selections available within the series
- High power dissipation capacity suitable for demanding thermal environments
- Designed for high-temperature applications up to 175 °C
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify that the specific suffix 'H' corresponds to the non-automotive qualified version as defined in the Rev. 2 datasheet. Confirm the ordering code matches the required hFE binning (-10H). Ensure the procurement channel provides the correct RoHS compliant packaging format. Cross-reference the marking code P5310H for physical identification upon receipt.
Selection Notes
Select this component when a PNP transistor with -80 V breakdown and -1 A continuous current rating is required in a compact SMD form factor. The -10H variant offers a controlled hFE range of 63 to 160, suitable for general switching and linear regulation tasks. Consider the 175 °C junction temperature limit for high-thermal-stress designs compared to lower-rated alternatives.
Part Context
The BCP53-10HX belongs to the BCP53H series of PNP medium power transistors manufactured by Nexperia. It serves as the PNP complement to the NPN BCP56H series. The device utilizes the SOT223 plastic package, which provides increased heatsink capabilities compared to smaller signal packages. This series is designed for robust performance in various electronic circuit applications requiring medium power handling.
Replacement Considerations
BCP53-10TX
FAQ
Is the BCP53-10HX automotive qualified?
No, the BCP53H series is not automotive qualified. Customers requiring automotive-grade components should consult Nexperia for alternative products specifically designated with the '-Q' suffix.
What is the marking code for the BCP53-10HX?
The marking code printed on the device body is P5310H.
What is the peak collector current capability?
The peak collector current (ICM) is -2 A for a single pulse duration of tp ≤ 1 ms.
