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The onsemi BCP5316MTWG is a PNP medium power transistor designed for surface-mount applications. It features an 80 V collector-emitter breakdown voltage and supports a continuous collector current of 1 A. The device operates with a maximum power dissipation of 875 mW and includes a transition frequency of 130 MHz. It utilizes a 3-WDFNW (2x2) package with wettable flanks to facilitate automated optical inspection. The component is qualified under the AEC-Q101 standard, ensuring suitability for automotive environments across a junction temperature range of -65°C to 150°C.
Verify the specific suffix MTWG against the official datasheet to confirm the exact packaging configuration and reel specifications. Ensure that the procurement channel provides traceability documentation required for automotive-grade components. Confirm that the delivered units match the AEC-Q101 qualification status specified in the manufacturer's technical data before integration into production lines.
Select this component when a PNP medium power transistor with automotive qualification is required. The 80 V rating and 1 A current capacity define its operational limits. Consider the 3-WDFNW package dimensions for PCB layout constraints. Verify thermal management requirements based on the 875 mW power dissipation limit under expected operating conditions.
This part belongs to the BCP53 series of PNP medium power transistors manufactured by onsemi. The series is engineered for general-purpose switching and amplification tasks. The specific model integrates automotive quality standards, distinguishing it from commercial-grade equivalents within the same electrical family.
Publicly documented parameter-equivalent substitutes include BCP53MTWG and NSVBCP5310MTWG. Verify pinout compatibility and thermal characteristics before substitution.