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The BCP5316TC is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 surface-mount package. It features a maximum collector-emitter voltage of -80V and a continuous collector current of -1A. The device supports a peak pulse current of -2A and offers a power dissipation rating of 2W. Electrical characteristics include a transition frequency of 150MHz and a DC current gain group of 16 (hFE range: 100 to 250 at IC = -150mA). It is qualified to AEC-Q101 standards for high reliability.
Verify the specific ordering suffix 'TC' against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure that the required AEC-Q101 qualification aligns with project reliability standards. Confirm compliance with RoHS and halogen-free requirements as specified in the datasheet notes before finalizing procurement.
Select this component for designs requiring a PNP transistor with -80V breakdown and -1A continuous current handling. The SOT-223 package provides adequate thermal performance for 2W dissipation on standard PCBs. Consider the hFE gain group 16 specification for biasing calculations. Verify compatibility with complementary NPN types like the BCP56 if push-pull configurations are utilized.
This part belongs to the BCP51/52/53 series of PNP medium power transistors from Diodes Incorporated. The series includes variants with different voltage ratings (-45V, -60V, -80V) and gain groups. The BCP53 variant specifically targets the -80V application space within the SOT-223 form factor, offering a robust solution for general-purpose medium power tasks.
Complementary NPN types in the series include BCP54, BCP55, and BCP56. Other manufacturers may offer equivalent parts, but verify pinout, voltage ratings, and thermal resistance match the original design requirements.