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The BCP53TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 package. It features a maximum collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) of -1 A. The device supports a peak pulse collector current (ICM) of -2 A and offers a power dissipation rating of 2 W. Electrical characteristics include a transition frequency (fT) of 150 MHz at IC = -50 mA and VCE = -10 V. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific gain group configuration required for your design, as the datasheet indicates available gain groups 10 and 16. Confirm that the standard BCP53TA meets your hFE requirements, or consider the BCP5310TA or BCP5316TA variants if specific gain ranges are mandatory. Ensure the SOT-223 thermal management aligns with your PCB layout for optimal heat dissipation.
Select this component when a PNP transistor with -80 V breakdown and -1 A continuous current is needed in a surface-mount format. Consider the complementary NPN types BCP54, BCP55, or BCP56 if matched pairs are required for push-pull configurations. Evaluate the thermal resistance parameters against your expected power dissipation levels to ensure safe operating temperatures under steady-state conditions.
This part belongs to the BCP51/52/53 series of PNP medium power transistors designed for general-purpose amplification and switching. The series utilizes a molded plastic SOT-223 case with matte tin plated leads. It is electrically compatible with other manufacturers' equivalents sharing the same pinout and electrical ratings, facilitating direct replacement in existing designs without circuit modification.
BCP5310TA
The maximum collector-emitter voltage (VCEO) is -80 V.
Yes, the BCP53TA is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive environments.
The transition frequency (fT) is typically 150 MHz when measured at a collector current of -50 mA and a collector-emitter voltage of -10 V.