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The BCP55-10,115 is an NPN medium power transistor from the Nexperia BCP55 series, housed in a SOT223 (SC-73) surface-mount package. It supports a collector-emitter voltage of 60 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device offers a DC current gain range of 63 to 160 at 150 mA. Key electrical characteristics include a transition frequency of 180 MHz and a maximum total power dissipation of 1.35 W on a 6 cm² copper pad.
Verify the specific ordering suffix matches the required current gain binning. Confirm that the component is not intended for automotive applications unless explicitly designated as such. Ensure the procurement documentation aligns with the latest product data sheet revision to avoid discrepancies in specifications or package details during integration.
Select this component when a 60 V NPN transistor with 1 A continuous current rating is required in a compact SMD form factor. The -10 suffix indicates a specific DC current gain range (63 to 160), which must be matched against circuit biasing requirements. Consider the thermal resistance values provided for different PCB copper areas to ensure adequate heat dissipation under operating conditions.
This part belongs to the BCP55 series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different current gain bins (-10 and -16) and complements in PNP technology (BCP52). The BCP55-10 specifically targets applications requiring moderate gain control within a standard SOT223 footprint, distinguishing it from higher-voltage or lower-power alternatives in the broader portfolio.
Direct functional substitutes within the same series include the BCP55 (standard gain) and BCP55-16 (higher gain). For pin-compatible replacements with different gain profiles, verify the hFE ranges against the datasheet. Ensure any alternative maintains the SOT223 package dimensions and 60 V / 1 A ratings.