BCP55-16,115

Overview

The Nexperia BCP55-16,115 is an NPN medium power transistor housed in a SOT223 (SC-73) surface-mount package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device supports a peak collector current of 2 A for pulses up to 1 ms. DC current gain ranges from 100 to 250 at VCE = 2 V and IC = 150 mA. Total power dissipation reaches 1.35 W on a 6 cm² collector pad. Transition frequency is typically 180 MHz.

Feature Summary

• High collector current capability with a 1 A continuous rating
• Three distinct current gain selections available within the series
• High power dissipation capability suitable for thermal management

Applications

• Linear voltage regulators
• Power management circuits
• Low-side switches
• MOSFET drivers
• Amplifiers

Procurement Notes

Verify the specific ordering suffix matches the required gain binning. Confirm the package type corresponds to the design footprint. Ensure the component version aligns with the latest product data sheet revision. Check that the application environment does not exceed the absolute maximum ratings defined in the datasheet.

Selection Notes

Select this variant when a high DC current gain range of 100 to 250 is required. Choose the SOT223 package for applications needing enhanced thermal conductivity via the exposed heatsink. Consider the 60 V breakdown voltage for standard low-voltage switching tasks. Evaluate the 1 A current limit against the load requirements before integration.

Part Context

This component belongs to the BCP55 series of NPN medium power transistors. It serves as the complement to the PNP BCP52 series. The series includes variants with different gain bins, such as BCP55 and BCP55-10. All share the same physical SOT223 package and general electrical characteristics.

Replacement Considerations

BCP52-16,115 is the PNP complement within the same series. Other BCP55 series variants offer different gain ranges but share identical packaging and voltage ratings.