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The BCP55-16TF is an NPN medium power transistor from the Nexperia BCP55T series, housed in a SOT223 (SC-73) surface-mount package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A, with a peak pulse capability of 2 A. The device offers three DC current gain selections; the -16 variant provides a minimum hFE of 100 at IC = 150 mA and VCE = 2 V. Total power dissipation reaches up to 1.8 W on a single-sided FR4 PCB with a 6 cm² collector pad. Transition frequency is typically 155 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact current gain binning and packaging configuration. Ensure that the procurement specifications align with the required thermal performance characteristics for the intended application environment.
Select this component when a 60 V NPN transistor with high current handling is required. The -16 suffix indicates a specific gain range suitable for linear operation. Evaluate the thermal resistance requirements based on the target PCB copper area and layer count to ensure safe operating conditions.
This part belongs to the BCP55T series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different current gain ranges (-10 and -16) and complements the BCP52 PNP counterparts. All devices share the same SOT223 physical footprint and electrical limits.
BCP52-16TF
The marking code for the BCP55-16T type number is P5516T.
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The maximum peak collector current is 2 A for a single pulse duration of tp ≤ 1 ms.