BCP55-6

Overview

The BCP55-6 is an NPN silicon planar medium power transistor manufactured by Diotec Semiconductor. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 1 A. The device operates within a temperature range of -55°C to +150°C with a power dissipation of 2 W in the SOT-223 package. The minimum DC current gain (hFE) is specified at 25 under standard test conditions.

Feature Summary

• High continuous collector current capability for medium power applications
• Complementary PNP types available for push-pull configurations
• Designed for general-purpose amplifier and switching uses

Applications

• General-purpose amplifiers
• Switching circuits
• Power management modules

Procurement Notes

Verify the specific suffix designation against official Diotec documentation to confirm electrical characteristics, as suffixes often denote binning or gain groups. Ensure the ordering part number matches the required package type and compliance standards before procurement.

Selection Notes

Select this component for designs requiring robust NPN switching or linear amplification with moderate power handling. Consider the thermal resistance of the SOT-223 package and ensure adequate heat sinking if operating near maximum ratings.

Part Context

This transistor belongs to the BCP series of medium power devices. It serves as the NPN counterpart to complementary PNP transistors like the BCP51, enabling efficient complementary symmetry circuits in audio and power supply designs.

Replacement Considerations

Direct substitutes include the BCP55 from other manufacturers such as Nexperia or Diodes Inc., provided pinouts and electrical limits are identical.